GaN Gate-Driver Architectures for High-Efficiency Inverters

Turbigo 16-01-2026

GaN Gate-Driver Architectures for High-Efficiency Inverters

Turbigo 16-01-2026
Riassunto

Località

Turbigo

Divisione Aziendale

Tipo di contratto

Data di pubblicazione

16-01-2026

Descrizione Lavoro

A leading semiconductor company is looking for a researcher to investigate Gallium Nitride (GaN) technology for inverter modules. The role involves conducting a comprehensive technology analysis, designing an optimized gate driver architecture for GaN devices, and validating performance through bench testing. Candidates should have strong skills in analog circuit design, layout design, and collaboration with cross-functional teams. This opportunity offers a chance to contribute to innovative power electronics solutions.
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